| 1. | decreases for conductors but increases for semiconductors. |
| 2. | increases for both conductors and semiconductors. |
| 3. | decreases for both conductors and semiconductors. |
| 4. | increases for conductors but decreases for semiconductors. |
The solids which have the negative temperature coefficient of resistance are:
| 1. | insulators only |
| 2. | semiconductors only |
| 3. | insulators and semiconductors |
| 4. | metals |
The electron concentration in an \(\mathrm{n\text-}\)type semiconductor is the same as the hole concentration in a \(\mathrm{p\text{-}}\)type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them.
| 1. | current in \(\mathrm{n\text-}\)type \(>\) current in \(\mathrm{p\text{-}}\)type. |
| 2. | no current will flow in \(\mathrm{p\text{-}}\)type, current will only flow in \(\mathrm{n\text-}\)type. |
| 3. | current in \(\mathrm{n\text-}\)type \(=\) current in \(\mathrm{p\text{-}}\)type. |
| 4. | current in \(\mathrm{p\text{-}}\)type \(>\) current in \(\mathrm{n\text-}\)type. |
An intrinsic semiconductor is converted into an \(\mathrm{n\text{-}}\)type extrinsic semiconductor by doping it with:
1. phosphorous
2. aluminium
3. silver
4. germanium
For a \(\mathrm{p}\text{-}\)type semiconductor, which of the following statements is true?
| 1. | Electrons are the majority carriers and pentavalent atoms are the dopants. |
| 2. | Electrons are the majority carriers and trivalent atoms are the dopants. |
| 3. | Holes are the majority carriers and trivalent atoms are the dopants. |
| 4. | Holes are the majority carriers and pentavalent atoms are the dopants. |
| 1. | Electrons are minority carriers and pentavalent atoms are dopants. |
| 2. | Holes are minority carriers and pentavalent atoms are dopants. |
| 3. | Holes are the majority carriers and trivalent atoms are dopants. |
| 4. | Electrons are the majority carriers and trivalent atoms are dopants. |
| 1. | in the case of \(\mathrm{C},\) the valence band is not completely filled at absolute zero temperature. |
| 2. | in the case of \(\mathrm{C},\) the conduction band is partly filled even at absolute zero temperature. |
| 3. | the four bonding electrons in the case of \(\mathrm{C}\) lie in the second orbit, whereas in the case of \(\mathrm{Si},\) they lie in the third. |
| 4. | the four bonding electrons in the case of \(\mathrm{C}\) lie in the third orbit, whereas for \(\mathrm{Si},\) they lie in the fourth orbit. |
| 1. | in forward bias only. |
| 2. | in reverse bias only. |
| 3. | as a voltage regulator in forward bias and as a simple pn junction diode in reverse bias. |
| 4. | as a voltage regulator in reverse bias and as a simple pn junction diode in forward bias. |
| 1. | both circuits \((a)\) and \((c)\) |
| 2. | circuit \((a)\) only |
| 3. | circuit \((b)\) only |
| 4. | circuit \((c)\) only |